InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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InP/InGaAs Heterostructure Bipolar Transistors Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Published:1991-02-15 Issue:Part 2, No. 2B Volume:30 Page:L258-L261
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kurishima Kenji,Makimoto Toshiki,Kobayashi Takashi,Ishibashi Tadao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of heavily Zn-doped InGaAs at low temperature by LP-MOCVD;Journal of Crystal Growth;2004-02

2. Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD;Journal of Crystal Growth;2004-01

3. Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1996

4. GaInAs/InP DHBT incorporating thick extrinsic base and selectively regrown emitter;Electronics Letters;1995-08-17

5. Growth temperature dependence of Zn diffusion in heterojunction bipolar transistor structures grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1995-01

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