Room-Temperature Observation of Excitonic Absorption in GaxIn1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy-Reference-Cited by-同舟云学术

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Room-Temperature Observation of Excitonic Absorption in GaxIn1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy

Published:1991-05-15 Issue:Part 2, No. 5B Volume:30 Page:L885-L887
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yokouchi Noriyuki,Uchida Toshikazu,Uchida Takashi,Miyamoto Tomoyuki,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Absorption spectroscopy on room temperature excitonic transitions in strained layer InGaAs/InGaAlAs multiquantum‐well structures;Journal of Applied Physics;1993-07

2. CBE growth of low threshold 1.5 μm InGaAs/InGaAsP MQW lasers;Journal of Crystal Growth;1992-05

3. Low-Threshold InGaAs/InGaAsP Multiple Quantum Well Lasers Grown by Chemical Beam Epitaxy;Japanese Journal of Applied Physics;1991-10-01

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