Negative-Differential-Resistance (NDR) Superlattice-Emitter Transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistors;IEEE Transactions on Electron Devices;2001-06
2. Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor;Applied Physics Letters;1999-07-05
3. High-gain and oscillatory transconductance by InGaAs/InAlAs multiple-quantum-well emitter bipolar transistor;Superlattices and Microstructures;1998-08
4. On the double negative-differential resistance of a superlattice-emitter resonant-tunneling bipolar transistor;Solid-State Electronics;1995-05
5. Application of a triple‐well superlattice emitter structure to GaAs switching device;Journal of Applied Physics;1992-11
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