Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors-Reference-Cited by-同舟云学术

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Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors

Published:1991-02-01 Issue:Part 2, No. 2A Volume:30 Page:L160-L162
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Jenq-Shinn,Chang Chun-Yen,Lee Chien-Ping,Chang Kou-Hsiung,Liu Don-Gey,Liou Der-Cherng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant-Tunneling Bipolar Transistor;Complete Guide to Semiconductor Devices;2010-11-03

2. Characteristics of AlGaAs/GaAs heterostructure RT-SCR model;Microelectronics Journal;2008-12

3. A model for the resonant tunneling semiconductor-controlled rectifier;Microelectronics Journal;2007-08

4. A self-consistent model to simulate large-signal electrical characteristics of resonant tunneling bipolar transistors;Solid-State Electronics;1996-11

5. The use of organometallic group-V sources for the metalorganic molecular beam epitaxy growth of In0.48Ga0.52P/GaAs and In0.53Ga0.47As/InP heterojunction bipolar device structures;Journal of Crystal Growth;1994-03

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