Preparation and Properties of InxGa1-xAs Microcrystallites Embedded in SiO2Glass Films-Reference-Cited by-同舟云学术

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Preparation and Properties of InxGa1-xAs Microcrystallites Embedded in SiO2Glass Films

Published:1991-03-15 Issue:Part 2, No. 3B Volume:30 Page:L521-L524
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsunetomo Keiji,Yamamoto Masaki,Osaka Yukio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and characterization of semiconductor-doped silica film saturable absorbers;Journal of the Optical Society of America B;2004-04-01

2. InAs-doped silica films for saturable absorber applications;Applied Physics Letters;1999-04-26

3. Semiconductor-doped-silica saturable-absorber films for solid-state laser mode locking;Optics Letters;1998-11-15

4. Ultrafast nonlinear optical effect in CdTe-doped glasses fabricated by the laser evaporation method;Optical Materials;1993-10

5. Preparation and optical nonlinearity of quantized indium arsenide nanocrystals;Chemistry of Materials;1993-05-01

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