Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition

Published:1991-07-01 Issue:Part 2, No. 7A Volume:30 Page:L1195-L1198
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakao Setsuo,Noda Mikio,Watatani Hirohumi,Maruno Shigeo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deposition of diamond film on silicon and quartz substrates located near DC plasma;Diamond and Related Materials;2005-11

2. Diamond growth by hollow cathode arc plasma chemical vapor deposition;Journal of Materials Research;1998-11

3. Diamond nucleation enhancement by pretreating the silicon substrate with a fluorocarbon plasma;Diamond and Related Materials;1998-09

4. Diamond coating on silicon nitride by intermittent discharge DC plasma chemical vapor deposition;Materials Science and Engineering: B;1997-08

5. Effect of Nucleation Density on the Morphology of Diamond Thin Films;Japanese Journal of Applied Physics;1994-11-15

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