In SituOptical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments;Journal of Crystal Growth;2011-06
2. A kinetic model for metalorganic chemical vapor deposition from trimethylgallium and arsine;Journal of Applied Physics;2000-04
3. Surface‐diffusion and step‐bunching mechanisms of metalorganic vapor‐phase epitaxy studied by high‐vacuum scanning tunneling microscopy;Journal of Applied Physics;1995-09
4. Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor;Le Journal de Physique IV;1995-06
5. Characterization of adsorption in flow type atomic layer epitaxy reactor;Applied Surface Science;1994-11
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