Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes-Reference-Cited by-同舟云学术

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Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

Published:2001-09-15 Issue:Part 2, No. 9A/B Volume:40 Page:L921-L924
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zhang Jian Ping,Adivarahan Vinod,Wang Hong Mei,Fareed Qhalid,Kuokstis Edmundas,Chitnis Ashay,Shatalov Maxim,Yang Jin Wei,Simin Grigory,Khan Muhammad Asif,Shur Michael,Gaska Remis

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of AlGaN-based deep UV LED performance by p-AlInGaN/AlInGaN graded superlattice electron blocking layer;Applied Optics;2023-07-27

2. Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates;Journal of Electronic Materials;2022-12-12

3. Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier;Optik;2021-12

4. Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies;Materials Research Bulletin;2021-08

5. Ultra-flat AlN grown with a pulsed H2 etching condition;Applied Physics Express;2018-12-20

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