Rugged Metal Electrode (RME) for High Density Memory Devices-Reference-Cited by-同舟云学术

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Rugged Metal Electrode (RME) for High Density Memory Devices

Published:2001-08-01 Issue:Part 2, No. 8A Volume:40 Page:L826-L828
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Joo Jae-Hyun,Kim Wan-Don,Jeong Yong-Kuk,Won Seok-Jun,Park Soon-Yeon,Yoo Cha-Young,Kim Sung-Tae,Moon Joo-Tae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modified atomic layer deposition of RuO2 thin films for capacitor electrodes;Applied Physics Letters;2007-07-30

2. Electroelasticity Relations and Fracture Mechanics of Piezoelectric Structures;Applied Mechanics Reviews;2007-01-01

3. Enhanced deposition and dielectric property of Ta/sub 2/O/sub 5/ thin films on a rugged pto electrode;IEEE Transactions on Electron Devices;2003-05

4. Effects of an Added Iodine Source (C2H5I) on Ru Metal–Organic Chemical Vapor Deposition;Chemical Vapor Deposition;2003-03-17

5. Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium;Japanese Journal of Applied Physics;2003-02-15

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