A Novel Simulation Algorithm for Si Valence Hole Quantization of Inversion Layer in Metal-Oxide-Semiconductor Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Phase-operation for conduction electron by atomic-scale scattering via single point-defect;Applied Physics Letters;2014-03-17
2. STS Study of 2D Subband State Formed in the Space Charge Layer of Si(111)-β√3 × √3-Bi;e-Journal of Surface Science and Nanotechnology;2014
3. Effect of surface carrier concentration on valence subbands in Si(111)p-type inversion layers: Angle-resolved photoemission spectroscopy;Physical Review B;2010-07-29
4. ARPES measurements on Si(111) hole subband induced by Pb and Ga adsorption;Applied Surface Science;2008-09
5. Visualization of In-Plane Dispersion of Hole Subbands by Photoelectron Spectroscopy;Physical Review Letters;2005-01-24
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