Carbon Diffusion through SiO2from a Hydrogenated Amorphous Carbon Layer and Accumulation at the SiO2/Si Interface-Reference-Cited by-同舟云学术

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Carbon Diffusion through SiO2from a Hydrogenated Amorphous Carbon Layer and Accumulation at the SiO2/Si Interface

Published:2001-04-15 Issue:Part 1, No. 4A Volume:40 Page:2197-2200
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Krafcsik Olga H.,Vida György,Pócsik István,Josepovits Katalin V.,Deák Péter

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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