High Average Power Diode End-Pumped Composite Nd:YAG Laser Passively Q-switched by Cr4+:YAG Saturable Absorber-Reference-Cited by-同舟云学术

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High Average Power Diode End-Pumped Composite Nd:YAG Laser Passively Q-switched by Cr4+:YAG Saturable Absorber

Published:2001-03-15 Issue:Part 1, No. 3A Volume:40 Page:1253-1259
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Pavel Nicolaie,Saikawa Jiro,Kurimura Sunao,Taira Takunori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 88 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Novel output pulse control of CW pumped Nd:YVO4/Cr:YAG microchip laser;Solid State Lasers XXXIII: Technology and Devices;2024-03-12

3. Study on pulse jitter of passively Q-switched Nd:YAG/Cr:YAG microchip laser;Advanced Lasers, High-Power Lasers, and Applications XIII;2022-12-28

4. Exploring the influence of pump beam quality on designing millijoule diode-end-pumped passively Q-switched lasers;Optics Express;2022-06-02

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