Enhancement of Photoluminescence and Electrical Properties of Ga-Doped ZnO Thin Film Grown on α-Al2O3(0001) Single-Crystal Substrate by rf Magnetron Sputtering through Rapid Thermal Annealing-Reference-Cited by-同舟云学术

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Enhancement of Photoluminescence and Electrical Properties of Ga-Doped ZnO Thin Film Grown on α-Al2O3(0001) Single-Crystal Substrate by rf Magnetron Sputtering through Rapid Thermal Annealing

Published:2001-10-01 Issue:Part 2, No. 10A Volume:40 Page:L1040-L1043
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cho Jung,Nah Jongbum,Oh Min-Seok,Song Jae-Hoon,Yoon Ki-Hyun,Jung Hyung-Jin,Choi Won-Kook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties and formation energy of chalcogen-doped (S/Se/Te) corundum Al2O3;Journal of Applied Physics;2024-08-01

2. Low-Temperature Growth of ZnMgO Thin Films by Atmospheric Spin-Coating Using Diethylzinc Solution;Journal of Electronic Materials;2023-05-12

3. Demonstration and Evaluation of p‐Type and n‐Type ZnO Nanoparticles‐Based Homojunction UV Light‐Emitting Diodes;physica status solidi (RRL) – Rapid Research Letters;2022-01-17

4. Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films;Scientific Reports;2021-04-07

5. Structure, morphology and photoluminescence attributes of Al/Ga co-doped ZnO nanofilms: Role of annealing time;Materials Research Bulletin;2018-01

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