Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors-Reference-Cited by-同舟云学术

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Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors

Published:2001-09-15 Issue:Part 1, No. 9A Volume:40 Page:5227-5236
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kimura Mutsumi,Nozawa Ryoichi,Inoue Satoshi,Shimoda Tatsuya,Lui Basil On-Kit,Tam Simon Wing-Bun,Migliorato Piero

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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