Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates-Reference-Cited by-同舟云学术

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Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates

Published:2001-09-15 Issue:Part 2, No. 9A/B Volume:40 Page:L925-L927
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuramoto Masaru,Kimura Akitaka,Sasaoka Chiaki,Arakida Takahiro,Nido Masaaki,Mizuta Masashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Specific features of gallium nitride selective epitaxy in round windows;Technical Physics Letters;2011-08

2. AlGaN epitaxial layers grown by HVPE on sapphire substrates;physica status solidi (c);2006-06

3. Thick AlN layers grown by HVPE on sapphire substrates;MRS Proceedings;2005-01

4. AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range;SPIE Proceedings;2004-12-29

5. P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE;MRS Proceedings;2004

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