Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Using La2O3 Thin Film as an Insulator-Reference-Cited by-同舟云学术

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Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Using La2O3 Thin Film as an Insulator

Published:2001-11-15 Issue:Part 2, No. 11B Volume:40 Page:L1235-L1237
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Won Dong-Jin,Wang Chae-Hyun,Choi Doo-Jin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Fe doping on the microstructure, optical and dispersion energy characteristics of TiO2 thin films prepared via spray pyrolysis technique;Results in Optics;2022-08

2. Synthesis and characterization of Zn-incorporated TiO2 thin films: impact of crystallite size on X-ray line broadening and bandgap tuning;Applied Physics A;2019-11-07

3. High-k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications;High-k Gate Dielectrics for CMOS Technology;2012-08-23

4. The electrical and interface properties of metal-ferroelectric (lanthanum substituted bismuth titanate: BLT)-insulator-semiconductor (MFIS) structures with various insulators;Journal of Materials Science;2006-11-22

5. Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films;Chemical Vapor Deposition;2006-03

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