Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors-Reference-Cited by-同舟云学术

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Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors

Published:2001-04-30 Issue:Part 1, No. 4B Volume:40 Page:2797-2800
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okada Hiroshi,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic Quantum Devices;Physical Models of Semiconductor Quantum Devices;2014

2. Potential profiles near the Schottky nanocontacts;Physica E: Low-dimensional Systems and Nanostructures;2011-06

3. Strain fields in arbitrary shaped quantum wires;Physics Letters A;2008-05

4. SiGe/Si(001) Stranski-Krastanow islands by liquid-phase epitaxy: Diffuse x-ray scattering versus growth observations;Physical Review B;2004-02-26

5. Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation;Nano Science and Technolgy

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