Electronic States of Si(001) Stepped Surface under Electric Field Parallel to Surface
Author:
Affiliation:
1. Faculty of Engineering, Shizuoka University, Hamamatsu 432
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
http://journals.jps.jp/doi/pdf/10.1143/JPSJ.61.3658
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. C60 adsorption on Si (100) 2×1 reconstructed surface with single vacancy in sub-surface from DFTB algorithm;Materials Science in Semiconductor Processing;2022-06
2. Non-empirical calculation of electronic states of impurity polygon in carbon sheet: 1, 2 and 3 pentagons;Surface Science;2001-11
3. Non-Empirical Calculation of Electronic States of Impurity Polygon in Carbon Sheet: Pentagon;Journal of the Physical Society of Japan;1999-12-15
4. Electronic structure of monolayer C60 on Si(100)2 × 1 surface;Surface Science;1996-06
5. Electronic states of C60 molecules on Si(001)2×1 and Si(111)7×7 surfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-05
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