Temporal Changes in Source–Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface-Reference-Cited by-同舟云学术

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Temporal Changes in Source–Drain Current for Organic Field-Effect Transistors Caused by Dipole on Insulator Surface

Published:2008-05-23 Issue: Volume:1 Page:061801
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Suemori Kouji,Taniguchi Misuzu,Uemura Sei,Yoshida Manabu,Hoshino Satoshi,Takada Noriyuki,Kodzasa Takehito,Kamata Toshihide

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/1/i=6/a=061801/pdf

Reference19 articles.

1. Low-k Insulators as the Choice of Dielectrics in Organic Field-Effect Transistors

2. Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator

3. High-Performance Organic Transistors Using Solution-Processed Nanoparticle-Filled High-k Polymer Gate Insulators

4. High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

5. Interface states in polymer metal-insulator-semiconductor devices

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1. Transesterification of dialkyl carbonates by poly(4-vinylphenol);Russian Chemical Bulletin;2020-02

2. Performance improvements of the hydrophobic and the dielectric properties of parylene C;Journal of Applied Physics;2013-10-21

3. Response delay caused by dielectric relaxation of polymer insulators for organic transistors and resolution method;Applied Physics Letters;2012-08-20

4. 6,13-Bis(triisopropylsilylethynyl) Pentacene Organic Field-Effect Transistors Utilizing Poly(p-silsesquioxane) Insulating Layers with Various Ratios of Phenol Groups;Japanese Journal of Applied Physics;2012-04-20

5. 6,13-Bis(triisopropylsilylethynyl) Pentacene Organic Field-Effect Transistors Utilizing Poly(p-silsesquioxane) Insulating Layers with Various Ratios of Phenol Groups;Japanese Journal of Applied Physics;2012-04-01

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