A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications-Reference-Cited by-同舟云学术

A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications

Published:2008-08-22 Issue: Volume:1 Page:092302
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Kitada Takahiro,Kanbara Toshiyuki,Morita Ken,Isu Toshiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/1/i=9/a=092302/pdf

Reference8 articles.

1. Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells

2. All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well

3. All-optical switches on a silicon chip realized using photonic crystal nanocavities

4. Ultra-fast photonic crystal/quantum dot alloptical switch for future photonic networks

5. Optical Kerr gate switching of AlGaAs/AlAs multilayer structures without pattern effects by the two-photon resonant nonlinear response

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Generation of nonlinear polarization to emit terahertz waves in above gap states in GaSb/AlGaSb multiple quantum wells;Applied Physics Express;2023-05-01

2. Quantum Optical Switches;Optical Switching;2022-07-08

3. Planar microcavities: Materials and processing for light control;Optical Materials: X;2022-01

4. Optical Frequency Comb Generation via Cascaded Intensity and Phase Photonic Crystal Modulators;IEEE Journal of Selected Topics in Quantum Electronics;2021-03

5. Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultrafast carrier relaxation;Physica E: Low-dimensional Systems and Nanostructures;2021-02