Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering-Reference-Cited by-同舟云学术

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Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering

Published:1992-09-30 Issue:Part 1, No. 9B Volume:31 Page:3017-3020
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okano Hiroshi,Tanaka Toshiharu,Shibata Kenichi,Nakano Shoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive magnetron sputtered AlN thin films: structural, linear and nonlinear optical characteristics;Journal of Materials Science: Materials in Electronics;2023-05

2. Low-temperature formation ofc-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering;Japanese Journal of Applied Physics;2017-12-20

3. AlN thin film growth using electron cyclotron resonance reactive sputtering;Journal of Physics: Conference Series;2014-11-27

4. Characterization of AlN Thin Films Grown by Pulsed Laser Deposition on Sapphire Substrate;Journal of the Korean Ceramic Society;2013-11-30

5. Control of in-plane and out-of-plane texture in shear mode piezoelectric ZnO films by ion-beam irradiation;Journal of Applied Physics;2007-08-15

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