X-Ray Mask Fabrication Process Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber-Reference-Cited by-同舟云学术

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X-Ray Mask Fabrication Process Using Cr Mask and ITO Stopper in the Dry Etching of W Absorber

Published:1992-12-15 Issue:Part 1, No. 12A Volume:31 Page:4086-4090
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujino Takeshi,Sasaki Kei,Marumoto Kenji,Yabe Hideki,Yoshioka Nobuyuki,Watakabe Yaichiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface diffusion model accounting for the temperature dependence of tungsten etching characteristics in a SF[sub 6] magnetoplasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

2. Formation and Characterization of Self-assembled Monolayers of Octadecyltrimethoxysilane on Chromium: Application in Low-Energy Electron Lithography;Langmuir;1998-01-01

3. Low-stress sputtered chromium–nitride hardmasks for x-ray mask fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11

4. Precise Stress Control of Ta Absorber using Low Stress Alumina Etching Mask for X-Ray Mask Fabrication;Japanese Journal of Applied Physics;1996-12-30

5. Fabrication of x-ray masks for giga-bit DRAM by using a SiC membrane and W–Ti absorber;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11

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