Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching-Reference-Cited by-同舟云学术

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Indium Arsenide Quantum Wires Fabricated by Electron Beam Lithography and Wet-Chemical Etching

Published:1992-12-30 Issue:Part 1, No. 12B Volume:31 Page:4515-4519
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoh Kanji,Kiyomi Kazumasa,Nishida Akira,Inoue Masataka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective Etching of 6.1 Å Materials for Transfer-Printed Devices;2022 IEEE 49th Photovoltaics Specialists Conference (PVSC);2022-06-05

2. A theoretical evaluation of optical properties of InAs/InP quantum wire with a dome cross-section;Optik;2018-12

3. Curvature-tuned InAs-based shells containing two-dimensional electron gas;Journal of Physics D: Applied Physics;2011-08-24

4. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors;Nature;2010-11

5. Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinement;Journal of Crystal Growth;2007-04

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