The Effect of Electrochemical Reduction and UV Exposure in H2S Gas on Interface Properties of ZnS/p-Hg1-xCdxTe
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The effect of ammonium sulfide treatment on interfacial properties in ZnS/HgCdTe heterostructure;Journal of Electroceramics;2006-12
2. Ammonium sulfide treatment of HgCdTe substrate and its effects on electrical properties of ZnS/HgCdTe heterostructure;Thin Solid Films;2005-07
3. Analysis of the dark current of focal-plane-array Hg1−xCdxTe diode;Materials Chemistry and Physics;2000-04
4. 1/f noise and specific detectivity of HgCdTe photodiodes passivated with ZnS-CdS films;IEEE Journal of Quantum Electronics;1999-05
5. Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS;Journal of The Electrochemical Society;1999-04-01
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