Generation Mechanism of Tensile Stress in a-Si1-xNx:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique-Reference-Cited by-同舟云学术

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Generation Mechanism of Tensile Stress in a-Si1-xNx:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique

Published:1992-11-15 Issue:Part 2, No. 11B Volume:31 Page:L1628-L1631
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nagayoshi Hiroshi,Hoe Wong Chee,Ueno Tomo,Kamisako Koichi,Kuroiwa Koichi,Shimada Toshikazu,Tarui Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ submicron patterning with silicon nitride evaporation masks;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

2. Effect of hydrogen radical annealing for Si1−xNx : HSiO2 double-layer passivation;Solar Energy Materials and Solar Cells;1997-11

3. SiNx:H/SiO2Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells;Japanese Journal of Applied Physics;1997-09-15

4. Preparation of a-Si1-xNx:H Film Using N2Microwave Afterglow Chemical Vapor Deposition Method;Japanese Journal of Applied Physics;1993-12-15

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