The Band Structures of Alloy System Hg1-xCdxTe Calculated by the Psedopotential Method
Author:
Affiliation:
1. General Education Department of Kyushu University
2. Fukuoka Women's University
Publisher
Physical Society of Japan
Subject
General Physics and Astronomy
Link
https://journals.jps.jp/doi/pdf/10.1143/JPSJ.31.415
Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Empirical Pseudopotential and Full-Brillouin-Zone k · p Electronic Structure of CdTe, HgTe, and Hg1−x Cd x Te;Journal of Electronic Materials;2009-04-30
3. Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-μm spectral region operating at room temperature;Microelectronics Journal;2007-02
4. Theoretical calculation of electron mobility in HgCdTe;Journal of Applied Physics;1997-01-15
5. Quantum confinement effects above the fundamental band gap in HgTe/Hg0.3Cd0.7Te heterostructures studied by resonant Raman scattering near theE1edge;Physical Review B;1996-12-15
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