Reaction between Aluminium and SiO2in Integrated Circuits-Reference-Cited by-同舟云学术

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Reaction between Aluminium and SiO2in Integrated Circuits

Published:1976-10 Issue:10 Volume:15 Page:1877-1880
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Cavanagh E.,Franco J. I.,Reca N. E. Walsöe de

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/15/i=10/a=1877/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Passivation layer breakdown during laser-fired contact formation for photovoltaic devices;Applied Physics Letters;2014-07-14

2. Modular, device-scale, direct-chip-attach packaging for microsystems;IEEE Transactions on Components and Packaging Technologies;2001

3. Failure of Al ‐ SiO2 ‐ Si MOS Capacitors at High Temperatures;Journal of The Electrochemical Society;1993-07-01

4. A.c. conduction in metal/CaF2/metal thin film structures;Thin Solid Films;1981-02

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