Double-Level Cu Inlaid Interconnects with Simultaneously Filled Via Plugs-Reference-Cited by-同舟云学术

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Double-Level Cu Inlaid Interconnects with Simultaneously Filled Via Plugs

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1107-1110
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Minamihaba Gaku,Iijima Tadashi,Shimooka Yoshiaki,Tamura Hitoshi,Kawanoue Takashi,Hirabayashi Hideaki,Sakurai Naoaki,Ohkawa Hideki,Obara Takashi,Egawa Hidemitu,Idaka Toshiaki,Kubota Takeshi,Shimizu Toshio,Koyama Mitsutoshi,Ooshima Jiro,Suguro Kyoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and electromigration in copper damascene lines;Microelectronics Reliability;2000-01

2. Effective Improvement on Barrier Capability of Chemical Vapor Deposited WSi x Using N 2 Plasma Treatment;Journal of The Electrochemical Society;1999-04-01

3. Electromigration failure modes in damascene copper interconnects;Microelectronics Reliability;1998-06

4. Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion;Japanese Journal of Applied Physics;1997-03-30

5. Microstructure and electromigration in copper damascene lines;1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296)

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