Hydrogen Diffusion in C-Doped InGaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Blistering study of H-implanted InGaAs for potential heterointegration applications;Semiconductor Science and Technology;2011-06-14
2. Low-base-resistance InP/InGaAs heterojunction bipolar transistors with a compositionally graded-base structure;Journal of Electronic Materials;2005-07
3. Influence of lattice mismatch on hydrogen incorporation into C-doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2002-03
4. Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability;Materials Science and Engineering: B;2001-03
5. Hydrogen removal by annealing from C-doped InGaAs grown on InP by metalorganic chemical vapor deposition;Journal of Crystal Growth;1999-04
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