X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect-Reference-Cited by-同舟云学术

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X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect

Published:1996-05-15 Issue:Part 1, No. 5A Volume:35 Page:2845-2850
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuboi Shinji,Yamashita Yoshio,Matsuo Tadashi,Ohta Tsuneaki,Shoki Tsutomu,Yoshihara Takuya,Taguchi Takao,Mitsui Soichiro,Noda Shuichi,Suzuki Kazuo,Hoga Hiroshi,Yamaguchi Yoh-ichi,Suzuki Katsumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pattern distortion of the stencil reticle caused by stress of silicon membrane and resist on the reticle;Emerging Lithographic Technologies VI;2002-07-05

2. Stress Relaxation of a Patterned Microstructure on a Diaphragm;Journal of Materials Research;2002-07

3. Recent progress in 1×x-ray mask technology: Feasibility study using ASET-NIST format TaXN x-ray masks with 100 nm rule 4 Gbit dynamic random access memory test patterns;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

4. Deposition and Characterization of Ta, TaNxand Ta4B Films for Next-Generation Lithography Mask Applications;Japanese Journal of Applied Physics;2000-12-30

5. Precise Delineation Characteristics of Advanced Electron Beam Mask Writer EB-X3 for Fabricating 1× X-Ray Masks;Japanese Journal of Applied Physics;2000-12-30

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