Noncontact Measurement of Generation Lifetime-Reference-Cited by-同舟云学术

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Noncontact Measurement of Generation Lifetime

Published:1996-10-15 Issue:Part 1, No. 10 Volume:35 Page:5539-5544
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kohno Motohiro,Hirae Sadao,Okada Hiroshi,Matsubara Hideaki,Nakatani Ikuyoshi,Imaoka Yasuhiro,Kusuda Tatsufumi,Sakai Takamasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of Generation Lifetime and Surface Generation Velocity of Semiconductor Wafers by a Contactless Zerbst Method;Journal of Electronic Materials;2010-03-04

2. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications;Progress in Quantum Electronics;2005-01

3. Contactless surface charge semiconductor characterization;Materials Science and Engineering: B;2002-04

4. Recombination current measurements in the space charge region of MOS field-induced pn junctions;Microelectronics Reliability;2001-06

5. Noncontact Measurement of Doping Profile for Bare Silicon;Japanese Journal of Applied Physics;1998-10-15

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