Clarification of Nitridation Effect on Oxide Formation Methods-Reference-Cited by-同舟云学术

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Clarification of Nitridation Effect on Oxide Formation Methods

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1454-1459
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuroi Takashi,Shirahata Masayoshi,Okumura Yoshinori,Shimizu Satoshi,Teramoto Akinobu,Anma Masatoshi,Inuishi Masahide,Miyoshi Hirokazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of ultrathin oxides of silicon by wet oxidation at very low (0.04 atm) water vapour pressure;Semiconductor Science and Technology;2001-10-10

2. Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C;Solid-State Electronics;2001-07

3. Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon;Applied Physics Letters;1999-03-29

4. Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation;Applied Physics Letters;1999-02-08

5. On the Better Quality of Wet-Grown Gate Oxides;Electrochemical and Solid-State Letters;1999

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