Formation of Highly Conductive p-Type ZnSe UsingLi3NDiffusion-Reference-Cited by-同舟云学术

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Formation of Highly Conductive p-Type ZnSe UsingLi3NDiffusion

Published:1996-07-15 Issue:Part 1, No. 7 Volume:35 Page:3878-3879
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Honda Tohru,Lim Sung Wook,Yanashima Katsunori,Inoue Kousuke,Hara Kazuhiko,Munekata Hiro,Kukimoto Hiroshi,Koyama Fumio,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel approach for improved green-emitting II-VI lasers;IEEE Journal of Selected Topics in Quantum Electronics;2001

2. Low threshold current densities for II-VI lasers;Electronics Letters;2000

3. p-type conductivity control of ZnSe with insertion of ZnTe:Li submonolayers in metalorganic molecular-beam epitaxy;Journal of Applied Physics;1998-12

4. Wide band-gap II–VI compounds—can efficient doping be achieved?;Vacuum;1998-07

5. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01

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