Polysilicon Thin-Film Transistors Processed at Low Temperature ($\bf \Leq 600^{\circ}C$) Using Solid-Phase Crystallization in Wet Oxygen Atmosphere-Reference-Cited by-同舟云学术

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Polysilicon Thin-Film Transistors Processed at Low Temperature ($\bf \Leq 600^{\circ}C$) Using Solid-Phase Crystallization in Wet Oxygen Atmosphere

Published:1996-06-01 Issue:Part 2, No. 6A Volume:35 Page:L680-L682
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hamada Hiroki,Sasaki Akihumi,Okita Yuji,Niina Tatuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallization of silicon films by new metal mediated mechanism;Journal of Materials Science: Materials in Electronics;2009-05-01

2. Effects of high pressure annealing on the characteristics of solid phase crystallization poly-Si thin-film transistors;Journal of Applied Physics;2008-02-15

3. Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing;MATERIALS TRANSACTIONS;2001

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