Effects of Electron Beam Exposure Conditions on the Surface Modification ofCaF2(111) for Heteroepitaxy of GaAs/CaF2Structure-Reference-Cited by-同舟云学术

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Effects of Electron Beam Exposure Conditions on the Surface Modification ofCaF2(111) for Heteroepitaxy of GaAs/CaF2Structure

Published:1996-03-15 Issue:Part 1, No. 3 Volume:35 Page:1701-1705
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hwang Sang-Man,Miyasato Keiichiro,Kawasaki Koji,Tsutsui Kazuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of resonant-tunneling diodes by Sb surfactant modified growth of Si films on CaF/sub 2/Si;IEEE Transactions On Nanotechnology;2003-12

2. Surfactant enhanced growth of thin Si films on CaF2/Si(1 1 1);Applied Surface Science;2003-04

3. GaAs Heteroepitaxy on Fluoride by Electron Beam Induced Surface Modification;MRS Proceedings;2001

4. Epitaxial growth of laminar crystalline silicon on CaF2;Applied Physics Letters;2000-08-28

5. Effects of the Two-Step Growth Method for GaAs Grown on CaF2/Si(111) with the Electron Beam Surface Modification Technique;Japanese Journal of Applied Physics;1999-03-15

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