Effect of Fermi Level Motion on the Optical, ESR and Transport Properties of CuInSe2-Reference-Cited by-同舟云学术

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Effect of Fermi Level Motion on the Optical, ESR and Transport Properties of CuInSe2

Published:1996-04-15 Issue:Part 1, No. 4A Volume:35 Page:2061-2067
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Katsuaki,Nishikawa Nobuyuki,Aksenov Igor,Shinzato Takeshi,Nakanishi Hisayuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly stoichiometry-deviating chalcopyrite quantum dots: synthesis and copper defects-correlated photophysical properties;Nanotechnology;2024-08-27

2. Electron Spin Resonance and Ultra Violet (UV) Photoluminescence of Ge Implanted CuGaSe2 Thin Films Prepared by the CCSVT (Chemical Close-spaced Vapor Transport) Technique;MRS Proceedings;2007

3. Study of electron irradiation-induced defects in CuInSe2 and CuInxGa1-xSe2 by electron spin resonance;Solar Energy Materials and Solar Cells;2006-01

4. EPR studies of point defects in Cu-III–VI2 chalcopyrite semiconductors;Materials Science in Semiconductor Processing;2003-10

5. ESR and NMR studies of CuInSe2 crystals having controlled component activities;Journal of Physics and Chemistry of Solids;2003-09

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