Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress
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Published:1996-04-15
Issue:Part 1, No. 4A
Volume:35
Page:2095-2101
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Tse Man-Siu,Wong Terence Kin-Shun,Ang Chew-Hoe
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering