Measurement of Carrier Concentration at the GaAs–Si Interface in GaAs on Si by Raman Scattering
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Published:1996-12-15
Issue:Part 1, No. 12A
Volume:35
Page:6013-6016
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Futagi Toshiro,Tachikawa Akiyoshi,Jono Aiji,Morikawa Yoji,Aigo Takashi,Moritani Akihiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering