Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors-Reference-Cited by-同舟云学术

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Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1198-1201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsushita Shigeharu,Fujii Emi,Inoue Daijiro,Terada Satoshi,Banba Seiichi,Matsumura Kohji,Sawada Minoru,Harada Yasoo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers;Japanese Journal of Applied Physics;1997-03-30

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