Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Film Oxidation Process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance of gamma irradiated P-channel 6H SiC MOSFETs: high total dose;IEEE Transactions on Nuclear Science;2003-02
2. Growth of ultrathin oxides of silicon by wet oxidation at very low (0.04 atm) water vapour pressure;Semiconductor Science and Technology;2001-10-10
3. Pushing reliability limits in SiO 2 : an extension to gate oxide scaling;Photonics 2000: International Conference on Fiber Optics and Photonics;2001-09-25
4. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY;International Journal of High Speed Electronics and Systems;2001-09
5. Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C;Solid-State Electronics;2001-07
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