High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In0.5Ga0.5P-Reference-Cited by-同舟云学术

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High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In0.5Ga0.5P

Published:1996-04-15 Issue:Part 1, No. 4A Volume:35 Page:2073-2076
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chai Chun-Yi,Wu Janne-Wha,Guo Jan-Dar,Huang Jung-A,Lai Yong-Lin,Chan Shih-Hsiung,Chang Chun-Yen,Chan Yi-Jen,Cheng Huang-Chung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions;physica status solidi (b);2019-09-04

2. Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ga0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy;Solid-State Electronics;1999-11

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