Improvement of Threshold Voltage Uniformity in Ion-Implanted GaAs-Metal-Semiconductor Field-Effect Transistors on Si
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Published:1996-11-15
Issue:Part 1, No. 11
Volume:35
Page:5664-5669
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Moritani Akihiro,Tachikawa Akiyoshi,Jono Aiji,Aigo Takashi,Ikematsu Yoichi,Sano Yoshiaki,Yamagishi Chouho,Akiyama Masahiro
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering