Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated Surfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. State-of-the-art passivation strategies of c-Si for photovoltaic applications: A review;Materials Science in Semiconductor Processing;2023-02
2. Iodine–Ethanol Surface Passivation for Measurement of Millisecond Carrier Lifetimes in Silicon Wafers with Different Crystallographic Orientations;physica status solidi (a);2019-07-16
3. Hydrogen Passivation for Estimating the Bulk Lifetime of Bare Silicon Wafers;physica status solidi (RRL) - Rapid Research Letters;2018-04-03
4. Potential process design and control for solar cell lean production in future;Optik;2018-02
5. Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review;physica status solidi (RRL) - Rapid Research Letters;2017-10-10
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