A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback Method-Reference-Cited by-同舟云学术

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A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback Method

Published:1986-08-20 Issue:Part 1, No. 8 Volume:25 Page:1264-1265
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kinoshita Susumu,Odagawa Tetsufumi,Iga Kenichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hemispherical resonator study for surface‐emitting InGaAsP/InP lasers;Applied Physics Letters;1990-01-29

2. Circular buried heterostructure (CBH) GaAlAs/GaAs surface emitting lasers;IEEE Journal of Quantum Electronics;1987-06

3. Microcavity GalaAs/GaAs surface-emitting laser with Ith = 6 mA;Electronics Letters;1987

4. Low-temperature CW operation of GaInAsP/InP surface-emitting laser with circular buried heterostructure;Electronics Letters;1986

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