A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD-Reference-Cited by-同舟云学术

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A New Self-Aligned Structure for (GaAl)As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD

Published:1986-06-20 Issue:Part 2, No. 6 Volume:25 Page:L498-L500
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakatsuka Shin-ichi,Ono Yuuichi,Kajimura Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resolution enhancement printing with a variable spot-size laser diode;Applied Optics;1997-08-20

2. High-Power Single-Mode Flared Laser Diode with an Intermediate-Width Stripe at the Flare Base;Japanese Journal of Applied Physics;1996-02-15

3. Large-scale metalorganic chemical vapor deposition growth of highly reliable 780 nm AlGaAs multiple quantum well high-power lasers;Journal of Crystal Growth;1993-10

4. High-power 780 nm AlGaAs quantum-well lasers and their reliable operation;IEEE Journal of Quantum Electronics;1991-06

5. Long-term 60 mW operation of 780 nm AlGaAa lasers with extended beam by additional low-Al-content layer inp-type cladding layer;Electronics Letters;1991-05-23

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