Annealing Effects on Al and AN-Si Contacts with 3C-SiC-Reference-Cited by-同舟云学术

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Annealing Effects on Al and AN-Si Contacts with 3C-SiC

Published:1986-07-20 Issue:Part 2, No. 7 Volume:25 Page:L592-L594
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Daimon Hiroshi,Yamanaka Mitsugu,Sakuma Eiichiro,Misawa Shunji,Yoshida Sadafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and Characterization of Nanolayered Pd-Based Metal/p-4H SiC Systems with Ohmic Behaviour;Journal of Nano Research;2010-04

2. Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC;Materials Science and Engineering: B;2003-04

3. Morphological study of the Al–Ti ohmic contact to p-type SiC;Solid-State Electronics;2002-05

4. Effect of annealing on electrical properties of Pt/β-SiC contact;Solid-State Electronics;2001-09

5. Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance;MRS Proceedings;2000

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