H 2 Partial Pressure Dependences of CH 3 Radical Density and Effects of H 2 Dilution on Carbon Thin-Film Formation in RF Discharge CH 4 Plasma-Reference-Cited by-同舟云学术

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H 2 Partial Pressure Dependences of CH 3 Radical Density and Effects of H 2 Dilution on Carbon Thin-Film Formation in RF Discharge CH 4 Plasma

Published:1995-01-15 Issue:Part 1, No. 1 Volume:34 Page:302-303
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Naito Susumu,Ito Nobuei,Hattori Tadashi,Goto Toshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-time monitoring of nucleation-growth cycle of carbon nanoparticles in acetylene plasmas;Journal of Applied Physics;2011-06-15

2. Kinetic and Diagnostic Studies of Molecular Plasmas Using Laser Absorption Techniques;Introduction to Complex Plasmas;2010

3. Diagnostic studies of molecular plasmas using mid-infrared semiconductor lasers;Applied Physics B;2008-07-03

4. Kinetic and Diagnostic Studies of Molecular Plasmas Using Laser Absorption Techniques;Journal of Physics: Conference Series;2007-10-01

5. Spatially resolved atomic excitation temperatures in CH4/H2and C3H8/H2RF discharges by optical emission spectroscopy;Plasma Sources Science and Technology;2007-05-01

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