Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide-Reference-Cited by-同舟云学术

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Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide

Published:1995-04-30 Issue:Part 1, No. 4B Volume:34 Page:2125-2131
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kazumi Hideyuki,Tago Kazutami

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. On the relationships between plasma chemistry, etching kinetics and etching residues in CF4+C4F8+Ar and CF4+CH2F2+Ar plasmas with various CF4/C4F8 and CF4/CH2F2 mixing ratios;Vacuum;2018-02

3. On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N2/Ar Inductively Coupled Plasma;Plasma Chemistry and Plasma Processing;2016-12-28

4. Electrochemical Characteristics of Closely Spaced Defect Tuned Carbon Nanotube Arrays;Journal of The Electrochemical Society;2013

5. Investigations of electron attachment to the perfluorocarbon molecules c-C4F8, 2-C4F8, 1,3 C4F6, and c-C5F8;International Journal of Mass Spectrometry;2008-11

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