Thermoelectric Power Studies on 1% Excess Te Doped Pb$_{\bf 0.8}$Sn$_{\bf 0.2}$Te Thin Films-Reference-Cited by-同舟云学术

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Thermoelectric Power Studies on 1% Excess Te Doped Pb$_{\bf 0.8}$Sn$_{\bf 0.2}$Te Thin Films

Published:1995-02-15 Issue:Part 1, No. 2A Volume:34 Page:534-538
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Das V. Damodara,Bahulayan C.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hysteresis-like behaviour of the thermoelectric voltage in photovoltaic materials;Thin Solid Films;2006-07

2. Mechanical and transport properties of pseudo-binary alloys (PbTe)1−x–(SnTe)x by pressureless sintering;Journal of Alloys and Compounds;2003-08

3. A study on Sn ion implantation into lead telluride thermoelectric material;Solar Energy Materials and Solar Cells;2000-04

4. Thickness and temperature dependence of electrical properties of Bi2(Te0.1Se0.9)3 thin films;Journal of Applied Physics;1999-08

5. Thickness and temperature effects on thermoelectric properties of Pb0.6Sn0.4Te thin films;Journal of Applied Physics;1996-08

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