Enhancement Effect of Plasma Enhanced Chemical Vapor Deposited SiN Capping Layer on Dielectric Cap Quantum Well Disordering-Reference-Cited by-同舟云学术

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Enhancement Effect of Plasma Enhanced Chemical Vapor Deposited SiN Capping Layer on Dielectric Cap Quantum Well Disordering

Published:1995-04-01 Issue:Part 2, No. 4A Volume:34 Page:L418-L421
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Choi Won Jun,Lee Seok,Zhang Jingming,YongKim ,Kim Sang Kuk,Lee Jung Il,Kang Kwang Nham,Cho Kyuman

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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